Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H2S Sensor at Room Temperature | Zendy

PoYi Chang | Zendy; Ching-Fu Lin | Zendy; Samer El Khoury Rouphael | Zendy; TingHsuan Huang | Zendy; Chang-Mao Wu | Zendy; Dominique Berling | Zendy; PingHung Yeh | Zendy; Chia-Jung Lu | Zendy; HsinFei Meng | Zendy; HsiaoWen Zan | Zendy; Olivier Soppera | Zendy

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Near-Infrared Laser-Annealed IZO Flexible Device as a Sensitive H₂S Sensor at Room Temperature

Author(s) -

PoYi Chang,

Ching-Fu Lin,

Samer El Khoury Rouphael,

TingHsuan Huang,

Chang-Mao Wu,

Dominique Berling,

PingHung Yeh,

Chia-Jung Lu,

HsinFei Meng,

HsiaoWen Zan,

Olivier Soppera

Publication year - 2020

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/acsami.0c03257

Subject(s) - materials science , laser , optoelectronics , infrared , optics , physics

A metal-oxide material (indium zinc oxide [IZO]) device with near-infrared (NIR) laser annealing was demonstrated on both glass and bendable plastic substrates (polycarbonate, polyethylene, and polyethylene terephthalate). After only 60 s, the sheet resistance of IZO films annealed with a laser was comparable to that of thermal-annealed devices at temperatures in the range of 200-300 °C (1 h). XPS, ATR, and AFM were used to investigate the changes in the sheet resistance and correlate them to the composition and morphology of the thin film. Finally, the NIR-laser-annealed IZO films were demonstrated to be capable of detecting changes in humidity and serving as a highly sensitive gas sensor of hydrogen sulfide (in ppb concentration), with room-temperature operation on a bendable substrate.

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