Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors | Zendy

Alessandro Grillo | Zendy; Antonio Di Bartolomeo | Zendy; Francesca Urban | Zendy; M. Passacantando | Zendy; José M. Caridad | Zendy; Jianbo Sun | Zendy; Luca Camilli | Zendy

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Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors

Author(s) -

Alessandro Grillo,

Antonio Di Bartolomeo,

Francesca Urban,

M. Passacantando,

José M. Caridad,

Jianbo Sun,

Luca Camilli

Publication year - 2020

Publication title -

acs applied materials and interfaces

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 2.535

H-Index - 228

eISSN - 1944-8252

pISSN - 1944-8244

DOI - 10.1021/acsami.0c00348

Subject(s) - materials science , germanium , field effect transistor , band bending , conductance , arsenide , variable range hopping , electrical resistivity and conductivity , conductivity , thermal conduction , condensed matter physics , transistor , electron mobility , atmospheric temperature range , field effect , optoelectronics , gallium arsenide , fabrication , silicon , electrical engineering , composite material , thermodynamics , chemistry , voltage , medicine , physics , alternative medicine , pathology , engineering

We report the fabrication and electrical characterization of germanium arsenide (GeAs) field-effect transistors with ultrathin channels. The electrical transport is investigated in the 20-280 K temperature range, revealing that the p-type electrical conductivity and the field-effect mobility are growing functions of temperature. An unexpected peak is observed in the temperature dependence of the carrier density per area at ∼75 K. Such a feature is explained considering that the increased carrier concentration at higher temperatures and the vertical band bending combined with the gate field lead to the formation of a two-dimensional (2D) conducting channel, limited to few interfacial GeAs layers, which dominates the channel conductance. The conductivity follows the variable-range hopping model at low temperatures and becomes the band-type at higher temperatures when the 2D channel is formed. The formation of the 2D channel is validated through a numerical simulation that shows excellent agreement with the experimental data.

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