Open AccessThickness Limitation of Band-to-Band Tunneling Process in GaAsSb/InGaAs Type-II Tunnel Junctions Designed for Multi-Junction Solar Cells
Author(s) -
Kevin Louarn,
Yann Claveau,
C. Fontaine,
Alexandre Arnoult,
Ludovic Marigo-Lombart,
Inès Massiot,
François Piquemal,
Alexandre Bounouh,
Nicolas Cavassilas,
Guilhem Almuneau
Publication year - 2019
Publication title -
acs applied energy materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.833
H-Index - 36
ISSN - 2574-0962
DOI - 10.1021/acsaem.8b01700
Subject(s) - quantum tunnelling , materials science , heterojunction , tunnel junction , molecular beam epitaxy , optoelectronics , band gap , band offset , epitaxy , nanotechnology , valence band , layer (electronics)
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