z-logo
open-access-imgOpen Access
Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers
Author(s) -
Xuejiao Gao,
Ilia Kolevatov,
Kaixiang Chen,
Bin Guan,
A. Mesli,
Edouard V. Monakhov,
Yaping Dan
Publication year - 2019
Publication title -
acs applied electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.9b00748
Subject(s) - dopant , boron , silicon , materials science , monolayer , doping , deep level transient spectroscopy , impurity , dopant activation , carbon fibers , analytical chemistry (journal) , nanotechnology , optoelectronics , chemistry , organic chemistry , composite number , composite material

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom