Performance Improvement of Multilayered SnS2 Field Effect Transistors through Synergistic Effect of Vacancy Repairing and Electron Doping Introduced by EDTA | Zendy

Shuai Wei | Zendy; Jihong Yan | Zendy; Lijie Zhou | Zendy; Shichao Zhang | Zendy; Mingjin Dai | Zendy; Feng Gao | Zendy; Yi Sun | Zendy; Yunfeng Qiu | Zendy; Zhenlong Wang | Zendy; Jia Zhang | Zendy; PingAn Hu | Zendy

Open Access

Performance Improvement of Multilayered SnS₂ Field Effect Transistors through Synergistic Effect of Vacancy Repairing and Electron Doping Introduced by EDTA

Author(s) -

Shuai Wei,

Jihong Yan,

Lijie Zhou,

Shichao Zhang,

Mingjin Dai,

Feng Gao,

Yi Sun,

Yunfeng Qiu,

Zhenlong Wang,

Jia Zhang,

PingAn Hu

Publication year - 2019

Publication title -

acs applied electronic materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.379

H-Index - 4

ISSN - 2637-6113

DOI - 10.1021/acsaelm.9b00550

Subject(s) - materials science , vacancy defect , doping , tin , electron mobility , optoelectronics , transistor , standby power , x ray photoelectron spectroscopy , analytical chemistry (journal) , nanotechnology , chemical engineering , chemistry , power (physics) , electrical engineering , crystallography , metallurgy , voltage , physics , engineering , quantum mechanics , chromatography

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