Open AccessHigh-Performance Graphene/AlGaN/GaN Schottky Junctions for Hot Electron Transistors
Author(s) -
Filippo Giannazzo,
Giuseppe Greco,
Emanuela Schilirò,
Raffaella Lo Nigro,
Ioannis Deretzis,
Antonino La Magna,
Fabrizio Roccaforte,
Ferdinando Iucolano,
S. Ravesi,
Éric Frayssinet,
Adrien Michon,
Y. Cordier
Publication year - 2019
Publication title -
acs applied electronic materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.9b00530
Subject(s) - materials science , optoelectronics , heterojunction , schottky barrier , schottky diode , transistor , doping , fermi level , graphene , current density , diode , electron , nanotechnology , electrical engineering , voltage , physics , quantum mechanics , engineering
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