Open AccessAn Optically Gated Transistor Composed of Amorphous M + Ge2Se3 (M = Cu or Sn) for Accessing and Continuously Programming a Memristor
Author(s) -
Kristy A. Campbell,
Randall Bassine,
Md Faisal Kabir,
Jeremy Astle
Publication year - 2018
Publication title -
acs applied electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.8b00034
Subject(s) - transistor , optoelectronics , materials science , amorphous solid , memristor , chalcogenide , non volatile memory , thin film transistor , photonics , chalcogenide glass , nanotechnology , electrical engineering , voltage , chemistry , layer (electronics) , engineering , organic chemistry
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