Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
Author(s) -
Saptarsi Ghosh,
A. Hinz,
Simon M. Fairclough,
Bogdan F. Spiridon,
Abdalla Eblabla,
Michael A. Casbon,
Menno J. Kappers,
K. Elgaid,
Saiful Alam,
Rachel A. Oliver,
D. J. Wallis
Publication year - 2021
Publication title -
acs applied electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.0c00966
Subject(s) - metalorganic vapour phase epitaxy , substrate (aquarium) , silicon , materials science , optoelectronics , layer (electronics) , epitaxy , nucleation , transistor , thermal conduction , nanotechnology , chemistry , composite material , electrical engineering , oceanography , organic chemistry , engineering , voltage , geology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom