z-logo
open-access-imgOpen Access
Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
Author(s) -
Saptarsi Ghosh,
A. Hinz,
Simon M. Fairclough,
Bogdan F. Spiridon,
Abdalla Eblabla,
Michael A. Casbon,
Menno J. Kappers,
K. Elgaid,
Saiful Alam,
Rachel A. Oliver,
D. J. Wallis
Publication year - 2021
Publication title -
acs applied electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.0c00966
Subject(s) - metalorganic vapour phase epitaxy , substrate (aquarium) , silicon , materials science , optoelectronics , layer (electronics) , epitaxy , nucleation , transistor , thermal conduction , nanotechnology , chemistry , composite material , electrical engineering , oceanography , organic chemistry , engineering , voltage , geology

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom