Open AccessInfluence of Interlayer Stacking on Gate-Induced Carrier Accumulation in Bilayer MoS2
Author(s) -
Mina Maruyama,
Kosuke Nagashio,
Susumu Okada
Publication year - 2020
Publication title -
acs applied electronic materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.379
H-Index - 4
ISSN - 2637-6113
DOI - 10.1021/acsaelm.0c00139
Subject(s) - stacking , bilayer , materials science , electrode , electric field , field effect transistor , condensed matter physics , density functional theory , bilayer graphene , doping , optoelectronics , transistor , nanotechnology , chemistry , voltage , membrane , electrical engineering , computational chemistry , graphene , physics , biochemistry , organic chemistry , quantum mechanics , engineering
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