Understanding the Effect of Catalyst Size on the Epitaxial Growth of Hierarchical Structured InGaP Nanowires
Author(s) -
Han Gao,
Qiang Sun,
Wen Sun,
Hark Hoe Tan,
C. Jagadish,
Jin Zou
Publication year - 2019
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/acs.nanolett.9b03835
Subject(s) - nanowire , catalysis , materials science , ternary operation , nanotechnology , chemical vapor deposition , epitaxy , chemical engineering , deposition (geology) , chemistry , layer (electronics) , organic chemistry , paleontology , sediment , computer science , engineering , biology , programming language
Understanding the effect of a catalyst on the growth of nanowires is crucial for their controllable synthesis. In this study, we report the growth of InGaP nanowires induced by different-sized Au catalysts by metal-organic chemical vapor deposition. Through electron microscopy characterization, two types of InGaP nanowires are identified, and the difference in catalyst size is shown to cause their different morphological, structural, and compositional characteristics. Furthermore, the influencing mechanism of catalyst size on the formation of hierarchical structures in nanowires is discussed. This study provides an insight for a better understanding of the growth of ternary nanowires, especially the effect of catalyst size, which can be a promising approach to control the ternary nanowire growth, and is therefore beneficial for the design of the corresponding nanowire-based device.
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