Nanoscale Ion-Doped Polymer Transistors
Author(s) -
Quentin Thiburce,
Alexander Giovannitti,
Iain McCulloch,
Alasdair J. Campbell
Publication year - 2019
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/acs.nanolett.8b04717
Subject(s) - nanoscopic scale , materials science , doping , nanotechnology , polymer , transistor , ion , optoelectronics , chemistry , electrical engineering , voltage , engineering , organic chemistry , composite material
Organic transistors with submicron dimensions have been shown to deviate from the expected behavior due to a variety of so-called "short-channel" effects, resulting in nonlinear output characteristics and a lack of current saturation, considerably limiting their use. Using an electrochemically doped polymer in which ions are dynamically injected and removed from the bulk of the semiconductor, we show that devices with nanoscale channel lengths down to 50 nm exhibit output curves with well-defined linear and saturation regimes. Additionally, they show very large on-currents on par with their microscale counterparts, large on-to-off ratios of 10 8 , and record-high width-normalized transconductances above 10 S m -1 . We believe this work paves the way for the fabrication of high-gain, high-current polymer integrated circuits such as sensor arrays operating at voltages below |1 V| and prepared using simple solution-processing methods.
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