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Controlling Catalyst Bulk Reservoir Effects for Monolayer Hexagonal Boron Nitride CVD
Author(s) -
Sabina Caneva,
Robert S. Weatherup,
Bernhard C. Bayer,
Raoul Blume,
Andrea CabreroVilatela,
Philipp BraeuningerWeimer,
MarieBlandine Martin,
Ruizhi Wang,
Carsten Baehtz,
Robert Schloegl,
Jannik C. Meyer,
Stephan Hofmann
Publication year - 2016
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/acs.nanolett.5b04586
Subject(s) - hexagonal boron nitride , borazine , monolayer , catalysis , materials science , chemical engineering , x ray photoelectron spectroscopy , dissolution , boron nitride , nanotechnology , nitride , in situ , crystal growth , crystallography , chemistry , graphene , organic chemistry , layer (electronics) , engineering
Highly controlled Fe-catalyzed growth of monolayer hexagonal boron nitride (h-BN) films is demonstrated by the dissolution of nitrogen into the catalyst bulk via NH3 exposure prior to the actual growth step. This "pre-filling" of the catalyst bulk reservoir allows us to control and limit the uptake of B and N species during borazine exposure and thereby to control the incubation time and h-BN growth kinetics while also limiting the contribution of uncontrolled precipitation-driven h-BN growth during cooling. Using in situ X-ray diffraction and in situ X-ray photoelectron spectroscopy combined with systematic growth calibrations, we develop an understanding and framework for engineering the catalyst bulk reservoir to optimize the growth process, which is also relevant to other 2D materials and their heterostructures.

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