Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping | Zendy

James T. Griffiths | Zendy; Siyuan Zhang | Zendy; Bertrand RouetLeduc | Zendy; Wai Yuen Fu | Zendy; An Bao | Zendy; Dandan Zhu | Zendy; D. J. Wallis | Zendy; Ashley Howkins | Zendy; Ian W. Boyd | Zendy; David Stowe | Zendy; Menno J. Kappers | Zendy; C. J. Humphreys | Zendy; Rachel A. Oliver | Zendy

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Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

Author(s) -

James T. Griffiths,

Siyuan Zhang,

Bertrand RouetLeduc,

Wai Yuen Fu,

An Bao,

Dandan Zhu,

D. J. Wallis,

Ashley Howkins,

Ian W. Boyd,

David Stowe,

Menno J. Kappers,

C. J. Humphreys,

Rachel A. Oliver

Publication year - 2015

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/acs.nanolett.5b03531

Subject(s) - quantum well , doping , optoelectronics , dopant , quantum confined stark effect , materials science , light emitting diode , stark effect , quantum , diode , wavelength , quantum efficiency , wide bandgap semiconductor , condensed matter physics , spectral line , physics , optics , laser , astronomy , quantum mechanics

Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.

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