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Electron States of Uniaxially Strained Graphene
Author(s) -
Hiroki Shioya,
Saverio Russo,
Michihisa Yamamoto,
Monica F. Craciun,
Seigo Tarucha
Publication year - 2015
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/acs.nanolett.5b03027
Subject(s) - graphene , raman spectroscopy , materials science , planar , condensed matter physics , electron , strain (injury) , scalar (mathematics) , landau quantization , nanotechnology , molecular physics , physics , optics , quantum mechanics , geometry , mathematics , medicine , computer graphics (images) , computer science
We report an experimental study of electron states and the resulting electronic transport properties of uniaxially strained graphene. For this study we developed a novel strain application method that is compatible with the planar device technology. We identify the value of the strain induced in graphene by Raman spectroscopy and show with atomic force microscopy that its topography consists of wrinkles up to 4 nm height aligned along the direction of the applied strain. Transport experiments reveal a broadening of the charge neutrality region and the convergence of Landau levels to multiple Dirac points in Landau-fan diagrams. These observations are consistent with large fluctuations of the scalar potential via the strain-induced wrinkles, which is experimentally observed for the first time.

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