Monolayer Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet | Zendy

Adrien Rousseau | Zendy; Lei Ren | Zendy; Alrik Durand | Zendy; Pierre Valvin | Zendy; Bernard Gil | Zendy; Kenji Watanabe | Zendy; Takashi Taniguchi | Zendy; B. Urbaszek | Zendy; X. Marie | Zendy; Cédric Robert | Zendy; Guillaume Cassabois | Zendy

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Monolayer Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet

Author(s) -

Adrien Rousseau,

Lei Ren,

Alrik Durand,

Pierre Valvin,

Bernard Gil,

Kenji Watanabe,

Takashi Taniguchi,

B. Urbaszek,

X. Marie,

Cédric Robert,

Guillaume Cassabois

Publication year - 2021

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/acs.nanolett.1c02531

Subject(s) - monolayer , photoluminescence , materials science , ultraviolet , optoelectronics , heterojunction , boron nitride , band gap , hyperspectral imaging , hexagonal boron nitride , luminescence , nanotechnology , graphene , remote sensing , geology

The optical response of 2D materials and their heterostructures is the subject of intense research with advanced investigation of the luminescence properties in devices made of exfoliated flakes of few- down to one-monolayer thickness. Despite its prevalence in 2D materials research, hexagonal boron nitride (hBN) remains unexplored in this ultimate regime because of its ultrawide bandgap of about 6 eV and the technical difficulties related to performing microscopy in the deep-ultraviolet domain. Here, we report hyperspectral imaging at wavelengths around 200 nm in exfoliated hBN at low temperature. In monolayer boron nitride, we observe direct-gap emission around 6.1 eV. In marked contrast to transition metal dichalcogenides, the photoluminescence signal is intense in few-layer hBN, a result of the near unity radiative efficiency in indirect-gap multilayer hBN.

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