Engineering a Robust Flat Band in III–V Semiconductor Heterostructures | Zendy

Nathali Alexandra Franchina Vergel | Zendy; L. Christiaan Post | Zendy; Davide Sciacca | Zendy; Maxime Berthe | Zendy; F. Vaurette | Zendy; Yannick Lambert | Zendy; Dmitri Yarekha | Zendy; David Troadec | Zendy; Christophe Coi | Zendy; Guillaume Fleury | Zendy; G. Patriarche | Zendy; Tao Xu | Zendy; L. Desplanque | Zendy; X. Wallart | Zendy; Daniël Vanmaekelbergh | Zendy; Christophe Delerue | Zendy; B. Grandidier | Zendy

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Engineering a Robust Flat Band in III–V Semiconductor Heterostructures

Author(s) -

Nathali Alexandra Franchina Vergel,

L. Christiaan Post,

Davide Sciacca,

Maxime Berthe,

F. Vaurette,

Yannick Lambert,

Dmitri Yarekha,

David Troadec,

Christophe Coi,

Guillaume Fleury,

G. Patriarche,

Tao Xu,

L. Desplanque,

X. Wallart,

Daniël Vanmaekelbergh,

Christophe Delerue,

B. Grandidier

Publication year - 2020

Publication title -

nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 4.853

H-Index - 488

eISSN - 1530-6992

pISSN - 1530-6984

DOI - 10.1021/acs.nanolett.0c04268

Subject(s) - heterojunction , semiconductor , materials science , condensed matter physics , lattice constant , electronic band structure , lithography , optoelectronics , semimetal , quantum tunnelling , band gap , physics , optics , diffraction

Electron states in semiconductor materials can be modified by quantum confinement. Adding to semiconductor heterostructures the concept of lateral geometry offers the possibility to further tailor the electronic band structure with the creation of unique flat bands. Using block copolymer lithography, we describe the design, fabrication, and characterization of multiorbital bands in a honeycomb In 0.53 Ga 0.47 As/InP heterostructure quantum well with a lattice constant of 21 nm. Thanks to an optimized surface quality, scanning tunnelling spectroscopy reveals the existence of a strong resonance localized between the lattice sites, signature of a p-orbital flat band. Together with theoretical computations, the impact of the nanopatterning imperfections on the band structure is examined. We show that the flat band is protected against the lateral and vertical disorder, making this industry-standard system particularly attractive for the study of exotic phases of matter.

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