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Electroluminescence from HgTe Nanocrystals and Its Use for Active Imaging
Author(s) -
Junling Qu,
Prachi Rastogi,
Charlie Gréboval,
Delphine Lagarde,
Audrey Chu,
Corentin Dabard,
Adrien Khalili,
Hervé Cruguel,
Cédric Robert,
Xiang Xu,
Sandrine Ithurria,
Mathieu G. Silly,
Simon Ferré,
X. Marie,
Emmanuel Lhuillier
Publication year - 2020
Publication title -
nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 4.853
H-Index - 488
eISSN - 1530-6992
pISSN - 1530-6984
DOI - 10.1021/acs.nanolett.0c02557
Subject(s) - optoelectronics , materials science , electroluminescence , heterojunction , infrared , zinc sulfide , active layer , light emitting diode , indium tin oxide , absorption (acoustics) , lead sulfide , diode , indium , optics , zinc , nanotechnology , quantum dot , layer (electronics) , physics , metallurgy , composite material , thin film transistor
Mercury telluride (HgTe) nanocrystals are among the most versatile infrared (IR) materials with the absorption of lowest energy optical absorption which can be tuned from the visible to the terahertz range. Therefore, they have been extensively considered as near IR emitters and as absorbers for low-cost IR detectors. However, the electroluminescence of HgTe remains poorly investigated despite its ability to go toward longer wavelengths compared to traditional lead sulfide (PbS). Here, we demonstrate a light-emitting diode (LED) based on an indium tin oxide (ITO)/zinc oxide (ZnO)/ZnO-HgTe/PbS/gold-stacked structure, where the emitting layer consists of a ZnO/HgTe bulk heterojunction which drives the charge balance in the system. This LED has low turn-on voltage, long lifetime, and high brightness. Finally, we conduct short wavelength infrared (SWIR) active imaging, where illumination is obtained from a HgTe NC-based LED, and demonstrate moisture detection.

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