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Carrier Extraction from Perovskite to Polymeric Charge Transport Layers Probed by Ultrafast Transient Absorption Spectroscopy
Author(s) -
Esma Ugur,
Jafar I. Khan,
Erkan Aydın,
Mingcong Wang,
Mindaugas Kirkus,
Marios Neophytou,
Iain McCulloch,
Stefaan De Wolf,
Frédéric Laquai
Publication year - 2019
Publication title -
the journal of physical chemistry letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.563
H-Index - 203
ISSN - 1948-7185
DOI - 10.1021/acs.jpclett.9b02502
Subject(s) - ultrafast laser spectroscopy , perovskite (structure) , materials science , diffusion , charge carrier , spectroscopy , absorption (acoustics) , extraction (chemistry) , chemical physics , carrier lifetime , recombination , optoelectronics , molecular physics , analytical chemistry (journal) , chemistry , crystallography , thermodynamics , silicon , physics , composite material , biochemistry , chromatography , quantum mechanics , gene
The efficiency of state-of-the-art perovskite solar cells is limited by carrier recombination at defects and interfaces. Thus, understanding these losses and how to reduce them is the way forward toward the Shockley-Queisser limit. Here, we demonstrate that ultrafast transient absorption spectroscopy can directly probe hole extraction and recombination dynamics at perovskite/hole transport layer (HTL) interfaces. To illustrate this, we employed PDPP-3T as HTL because its ground-state absorption is at lower energy than the perovskite's photobleach, enabling direct monitoring of interfacial hole extraction and recombination. Moreover, by fitting the carrier dynamics using a diffusion model, we determined the carrier mobility. Afterwards, by varying the perovskite thickness, we distinguished between carrier diffusion and carrier extraction at the interface. Lastly, we prepared device-like structures, TiO 2 /perovskite/PDPP-3T stacks, and observed reduced carrier recombination in the perovskite. From PDPP-3T carrier dynamics, we deduced that hole extraction is one order faster than recombination of holes at the interface.

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