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The diffuse reflectance spectroelectrochemistry (SE-DRS) and reversed double-beam photoacoustic spectroscopy (RDB-PAS) provide unique, complementary information on the density of electronic states (DOS) in the vicinity of the conduction band bottom. The measurements are performed under quite different conditions, representing the solid/liquid and solid/gas interfaces in SE-DRS and RDB-PAS, respectively. DOS profiles obtained from both types of measurements can be considered as unique "fingerprints" of the tested materials. The analysis of DOS profiles recorded for 16 different TiO 2 samples confirms that both methods similarly describe the shapes of DOS profiles around the conduction band edges. The states characterized by energy higher than VBT (valence-band top) + E  g can be considered as electronic states within the conduction band. Recognition of the potential of the conduction band bottom allows one to classify the electronic states as deep or shallow electron traps or conduction band states, which play different roles in photocatalysis. The comparative analysis shows that both methods provide very useful information which can be used in understanding and predicting the photo(electro)catalytic reactivity of semiconductors.

the journal of physical chemistry letters

Combined Spectroscopic Methods of Determination of Density of Electronic States: Comparative Analysis of Diffuse Reflectance Spectroelectrochemistry and Reversed Double-Beam Photoacoustic Spectroscopy