Pressure Impact on the Crystal Structure, Optical, and Transport Properties in Layered Oxychalcogenides BiCuChO (Ch = S, Se)
Author(s) -
Qian Zhang,
Chen Chen,
Nana Li,
Quan Huang,
Yu He,
Xuqiang Liu,
Bihan Wang,
Dongzhou Zhang,
Duck Young Kim,
Yonggang Wang,
Bo Xu,
Wenge Yang
Publication year - 2018
Publication title -
the journal of physical chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.401
H-Index - 289
eISSN - 1932-7455
pISSN - 1932-7447
DOI - 10.1021/acs.jpcc.8b04996
Subject(s) - materials science , delocalized electron , photocurrent , semiconductor , raman spectroscopy , thermoelectric effect , band gap , crystal (programming language) , doping , crystal structure , electronic band structure , optoelectronics , electronic structure , condensed matter physics , crystallography , chemistry , optics , physics , organic chemistry , computer science , thermodynamics , programming language
The layered oxychalcogenides BiCuChO (Ch = S, Se, Te) represent a unique family of two-dimensional semiconductors with extraordinary optoelectronic and thermoelectric properties. Chemical strategies such as elemental doping have been used to modify their crystal structures and electronic configurations for better photocatalytic performances. Herein, we report the pressure impact on the crystalline and electronic band structures of BiCuChO (Ch = S, Se) with in situ synchrotron X-ray diffraction, Raman spectroscopy, electric resistivity and photocurrent measurements, and first-principle calculations. Under pressure, the crystalline lattices shrink continuously without symmetry breaking, which enhances the crystal field splitting; on the other hand, the pressure-induced charge delocalization causes the band broadening. The competition between the crystal field and charge delocalization demonstrates an efficient tool for band gap engineering: the electrical conductivity is enhanced below 12 GPa and monotonica...
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom