Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation
Author(s) -
R. R. Q. Freitas,
Roberto Rivelino,
F. de Brito Mota,
C.M.C. de Castilho,
A. KakanakovaGeorgieva,
G.K. Gueorguiev
Publication year - 2015
Publication title -
the journal of physical chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.401
H-Index - 289
eISSN - 1932-7455
pISSN - 1932-7447
DOI - 10.1021/acs.jpcc.5b07961
Subject(s) - materials science , topology (electrical circuits) , band gap , topological insulator , bismuth , honeycomb structure , electronic band structure , condensed matter physics , optoelectronics , physics , composite material , mathematics , combinatorics , metallurgy
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