Dangling-to-Interstitial Oxygen Transition and Its Modifications of the Electronic Structure in Few-Layer Phosphorene | Zendy

Juan Fernando Gómez-Pérez | Zendy; J.D. Correa | Zendy; Cora Pravda Bartus | Zendy; Zoltán Kónya | Zendy; Ákos Kukovecz | Zendy

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Dangling-to-Interstitial Oxygen Transition and Its Modifications of the Electronic Structure in Few-Layer Phosphorene

Author(s) -

Juan Fernando Gómez-Pérez,

J.D. Correa,

Cora Pravda Bartus,

Zoltán Kónya,

Ákos Kukovecz

Publication year - 2020

Publication title -

the journal of physical chemistry c

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.401

H-Index - 289

eISSN - 1932-7455

pISSN - 1932-7447

DOI - 10.1021/acs.jpcc.0c06542

Subject(s) - ohmic contact , activation energy , materials science , phosphorene , dangling bond , oxide , condensed matter physics , chemical physics , electrical resistance and conductance , work function , conductance , schottky barrier , schottky diode , heterojunction , electrical resistivity and conductivity , semiconductor , layer (electronics) , optoelectronics , silicon , chemistry , band gap , nanotechnology , diode , metallurgy , composite material , electrical engineering , physics , engineering

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