Open AccessOrigin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers
Author(s) -
Zhaofu Zhang,
Yuzheng Guo,
John Robertson
Publication year - 2020
Publication title -
the journal of physical chemistry c
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.401
H-Index - 289
eISSN - 1932-7455
pISSN - 1932-7447
DOI - 10.1021/acs.jpcc.0c06228
Subject(s) - condensed matter physics , schottky barrier , fermi level , supercell , materials science , band gap , semiconductor , silicide , density of states , silicon , physics , electron , optoelectronics , diode , quantum mechanics , thunderstorm , meteorology
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