Nickel Germanide Thin Films by Atomic Layer Deposition | Zendy

Katja Väyrynen | Zendy; Anton Vihervaara | Zendy; Timo Hatanpää | Zendy; Miika Mattinen | Zendy; Mikko Heikkilä | Zendy; Kenichiro Mizohata | Zendy; J. Räisänen | Zendy; Mikko Ritala | Zendy; Markku Leskelä | Zendy

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Nickel Germanide Thin Films by Atomic Layer Deposition

Author(s) -

Katja Väyrynen,

Anton Vihervaara,

Timo Hatanpää,

Miika Mattinen,

Mikko Heikkilä,

Kenichiro Mizohata,

J. Räisänen,

Mikko Ritala,

Markku Leskelä

Publication year - 2019

Publication title -

chemistry of materials

Language(s) - Uncategorized

Resource type - Journals

SCImago Journal Rank - 3.741

H-Index - 375

eISSN - 1520-5002

pISSN - 0897-4756

DOI - 10.1021/acs.chemmater.9b01877

Subject(s) - germanide , atomic layer deposition , microelectronics , materials science , nickel , thin film , annealing (glass) , electrical resistivity and conductivity , crystallinity , chemical engineering , nanotechnology , metallurgy , silicon , germanium , composite material , engineering , electrical engineering

This work presents preparation of nickel germanide (Ni2Ge) thin films by atomic layer deposition (ALD). The films were grown using NiCl2(tmpda) (tmpda = N,N,N′,N′,-tetramethyl-1,3-propanediamine) a...

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