Soft Nondamaging Contacts Formed from Eutectic Ga–In for the Accurate Determination of Dielectric Constants of Organic Materials
Author(s) -
Evgenia Douvogianni,
Xinkai Qiu,
Li Qiu,
Fatemeh Jahani,
Floris B. Kooistra,
Jan C. Hummelen,
Ryan C. Chiechi
Publication year - 2018
Publication title -
chemistry of materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.741
H-Index - 375
eISSN - 1520-5002
pISSN - 0897-4756
DOI - 10.1021/acs.chemmater.8b02212
Subject(s) - eutectic system , materials science , gallium , dielectric , indium , electrode , thin film , dielectric spectroscopy , polymer , analytical chemistry (journal) , nanotechnology , optoelectronics , alloy , composite material , electrochemistry , organic chemistry , chemistry , metallurgy
A method for accurately measuring the relative dielectric constant (ε r ) of thin films of soft, organic materials is described. The effects of the bombardment of these materials with hot Al atoms, the most commonly used top electrode, are mitigated by using electrodes fabricated from eutectic gallium-indium (EGaIn). The geometry of the electrode is defined by injection into microchannels to form stable structures that are nondamaging and that conform to the topology of the organic thin film. The ε r of a series of references and new organic materials, polymers, and fullerene derivatives was derived from impedance spectroscopy measurements for both Al and EGaIn electrodes showing the specific limitations of Al with soft, organic materials and overcoming them with EGaIn to determine their dielectric properties and provide realistic values of ε r .
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