Area-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area Activation | Zendy

Alfredo Mameli | Zendy; Yinghuan Kuang | Zendy; Morteza Aghaee | Zendy; Chaitanya Krishna Ande | Zendy; Bora Karasulu | Zendy; Mariadriana Creatore | Zendy; Adriaan J. M. Mackus | Zendy; W. M. M. Kessels | Zendy; F. Roozeboom | Zendy

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Area-Selective Atomic Layer Deposition of In₂O₃:H Using a μ-Plasma Printer for Local Area Activation

Author(s) -

Alfredo Mameli,

Yinghuan Kuang,

Morteza Aghaee,

Chaitanya Krishna Ande,

Bora Karasulu,

Mariadriana Creatore,

Adriaan J. M. Mackus,

W. M. M. Kessels,

F. Roozeboom

Publication year - 2017

Publication title -

chemistry of materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.741

H-Index - 375

eISSN - 1520-5002

pISSN - 0897-4756

DOI - 10.1021/acs.chemmater.6b04469

Subject(s) - atomic layer deposition , citation , library science , computer science , nanotechnology , layer (electronics) , physics , materials science

Researchers present a novel method for area-selective atomic layer deposition (AS-ALD) large-area electronics. It is a direct-write ALD process of In2O3:H, a highly promising and relevant transparent conductive oxide (TCO) material which makes use of printing technology for surface activation. first the surface of H-terminated silicon materials is locally activated by a μ-plasma printer in air or O2, and In2O3:H is deposited selectively on the activated areas. The selectivity stems from the fact that ALD In2O3:H leads to very long nucleation delays on H-terminated silicon materials.

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