Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core–Shell Nanorods | Zendy

Emmanuel D. Le Boulbar | Zendy; P. R. Edwards | Zendy; Shahrzad Hosseini Vajargah | Zendy; Ian Griffiths | Zendy; Ionut Gîrgel | Zendy; PierreMarie Coulon | Zendy; D. Cherns | Zendy; Robert Martin | Zendy; C. J. Humphreys | Zendy; Chris Bowen | Zendy; D.W.E. Allsopp | Zendy; Philip A. Shields | Zendy

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Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core–Shell Nanorods

Author(s) -

Emmanuel D. Le Boulbar,

P. R. Edwards,

Shahrzad Hosseini Vajargah,

Ian Griffiths,

Ionut Gîrgel,

PierreMarie Coulon,

D. Cherns,

Robert Martin,

C. J. Humphreys,

Chris Bowen,

D.W.E. Allsopp,

Philip A. Shields

Publication year - 2016

Publication title -

crystal growth and design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.966

H-Index - 155

eISSN - 1528-7505

pISSN - 1528-7483

DOI - 10.1021/acs.cgd.5b01438

Subject(s) - cathodoluminescence , materials science , nanorod , quantum well , optoelectronics , homogeneity (statistics) , epitaxy , light emission , transmission electron microscopy , metalorganic vapour phase epitaxy , optics , nanotechnology , luminescence , laser , physics , statistics , mathematics , layer (electronics)

Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ~7 meV.µm-1 along the m-plane facets from core-shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 µm. High-resolution transmission electron microscopy and spatially-resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core-shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices

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