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Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in light-emitting devices. This paper demonstrates variations in optical emission energy as low as ~7 meV.µm-1 along the m-plane facets from core-shell InGaN/GaN single quantum wells as measured through high-resolution cathodoluminescence hyperspectral imaging. The layers were grown by metal organic vapor phase epitaxy on etched GaN nanorod arrays with a pitch of 2 µm. High-resolution transmission electron microscopy and spatially-resolved energy-dispersive X-ray spectroscopy measurements demonstrate a long-range InN-content and thickness homogeneity along the entire 1.2 μm length of the m-plane. Such homogeneous emission was found on the m-plane despite the observation of short range compositional fluctuations in the InGaN single quantum well. The ability to achieve this uniform optical emission from InGaN/GaN core-shell layers is critical to enable them to compete with and replace conventional planar light-emitting devices

Structural and Optical Emission Uniformity of m-Plane InGaN Single Quantum Wells in Core–Shell Nanorods