Open AccessHot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies
Author(s) -
Rosalía Delgado Carrascón,
Steffen Richter,
Muhammad Nawaz,
T. Paskova,
Vanya Darakchieva
Publication year - 2022
Publication title -
crystal growth and design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.966
H-Index - 155
eISSN - 1528-7505
pISSN - 1528-7483
DOI - 10.1021/acs.cgd.2c00683
Subject(s) - metalorganic vapour phase epitaxy , nucleation , materials science , chemical vapor deposition , epitaxy , dislocation , optoelectronics , nanotechnology , layer (electronics) , chemistry , composite material , organic chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom