Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC | Zendy

Cristiano Calabretta | Zendy; Viviana Scuderi | Zendy; Corrado Bongiorno | Zendy; Annalisa Cannizzaro | Zendy; Ruggero Anzalone | Zendy; L. Calcagno | Zendy; Marco Mauceri | Zendy; Danilo Crippa | Zendy; Simona Boninelli | Zendy; Francesco La Via | Zendy

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Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

Author(s) -

Cristiano Calabretta,

Viviana Scuderi,

Corrado Bongiorno,

Annalisa Cannizzaro,

Ruggero Anzalone,

L. Calcagno,

Marco Mauceri,

Danilo Crippa,

Simona Boninelli,

Francesco La Via

Publication year - 2022

Publication title -

crystal growth and design

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.966

H-Index - 155

eISSN - 1528-7505

pISSN - 1528-7483

DOI - 10.1021/acs.cgd.2c00515

Subject(s) - materials science , nitrogen , silicon carbide , stacking fault , diamond , microelectronics , stacking , doping , chemical vapor deposition , transmission electron microscopy , silicon , high resolution transmission electron microscopy , scanning electron microscope , crystallography , analytical chemistry (journal) , composite material , nanotechnology , optoelectronics , dislocation , chemistry , organic chemistry , chromatography

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