In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene
Author(s) -
Camille Barbier,
Tao Zhou,
G. Renaud,
Olivier Geaymond,
P. Le Fèvre,
Frank Glas,
Ali Madouri,
A. Cavanna,
Laurent Travers,
Martina Morassi,
N. Gogneau,
Maria Tchernycheva,
JeanChristophe Harmand,
Ludovic Largeau
Publication year - 2020
Publication title -
crystal growth and design
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.966
H-Index - 155
eISSN - 1528-7505
pISSN - 1528-7483
DOI - 10.1021/acs.cgd.0c00306
Subject(s) - nucleation , graphene , materials science , molecular beam epitaxy , diffractometer , crystallography , lattice constant , nanowire , diffraction , crystallite , synchrotron , chemical physics , nanotechnology , crystal structure , epitaxy , chemistry , layer (electronics) , optics , physics , organic chemistry
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