Vertical Ge photodetector base on InP taper waveguide | Zendy

I. S. Amiri | Zendy; M. M. Ariannejad | Zendy; Saaidal Razalli Azzuhri | Zendy; Toni Anwar | Zendy; Vahid Kouhdaragh | Zendy; P.P. Yupapin | Zendy

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Vertical Ge photodetector base on InP taper waveguide

Author(s) -

I. S. Amiri,

M. M. Ariannejad,

Saaidal Razalli Azzuhri,

Toni Anwar,

Vahid Kouhdaragh,

P.P. Yupapin

Publication year - 2018

Publication title -

results in physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.743

H-Index - 56

ISSN - 2211-3797

DOI - 10.1016/j.rinp.2018.03.014

Subject(s) - photodetector , optoelectronics , materials science , germanium , finite difference time domain method , waveguide , cmos , chip , optics , silicon , electrical engineering , physics , engineering

In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

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