Open AccessEffect of gamma ray absorbed dose on the FET transistor parameters
Author(s) -
Baharak Eslami,
S. Ashrafi
Publication year - 2016
Publication title -
results in physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.743
H-Index - 56
ISSN - 2211-3797
DOI - 10.1016/j.rinp.2016.07.003
Subject(s) - absorbed dose , dosimetry , mosfet , materials science , transistor , field effect transistor , optoelectronics , threshold voltage , radiation , sensitivity (control systems) , irradiation , dosimeter , semiconductor , voltage , nuclear medicine , electronic engineering , electrical engineering , physics , optics , medicine , nuclear physics , engineering
This article tries to explain a modified method on dosimetry, based on electronic solid state including MOSFET (metal oxide semiconductor field effect) transistors. For this purpose, behavior of two models of MOSFETs has been studied as a function of the absorbed dose. The MOSFETs were irradiated at room temperature by 137Cs gamma ray source in the dose range of 1–5Gy. Threshold voltage variation of investigated samples has been studied based on their transfer characteristic curves (TF) and also using the readout circuit (RC). For evaluation of laboratory samples sensitivity at different operating conditions, different biases were applied on the gate. In practical applications of radiation dosimetry, a significant change occurs in the threshold voltage of irradiated MOSFETs. And sensitivity of these MOSFETs is increased with increasing the bias values. Therefore, these transistors can be excellent candidates as low-cost sensors for systems that are capable of measuring gamma radiation dose
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