RF Sputtering of ZnO (002) Thin Films on Top of 3C-SiC-on-Si (100) Substrates for Low Cost Piezoelectric Devices | Zendy

Visakh Valliyil Sasi | Zendy; Adeel Iqbal | Zendy; Kien Chaik | Zendy; Philip Tanner | Zendy; Alan Iacopi | Zendy; Faisal Mohd-Yasin | Zendy

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RF Sputtering of ZnO (002) Thin Films on Top of 3C-SiC-on-Si (100) Substrates for Low Cost Piezoelectric Devices

Author(s) -

Visakh Valliyil Sasi,

Adeel Iqbal,

Kien Chaik,

Philip Tanner,

Alan Iacopi,

Faisal Mohd-Yasin

Publication year - 2016

Publication title -

procedia engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.32

H-Index - 74

ISSN - 1877-7058

DOI - 10.1016/j.proeng.2016.11.346

Subject(s) - materials science , piezoelectricity , annealing (glass) , thin film , sputtering , optoelectronics , epitaxy , sputter deposition , diffraction , composite material , optics , nanotechnology , physics , layer (electronics)

In this paper, we deposited c-axis oriented ZnO thin films on top of epitaxial 3C-SiC/Si (100) substrates using RF magnetron sputtering. We investigated the effect of O2/Ar ratio and the post-annealing temperature. The grazing angle incident x-ray diffraction results show that ZnO thin-films are highly oriented along the (002) crystalline direction between the O2/Ar ratio of 30% to 50%, at the post-annealing temperature of 600 ˚C in nitrogen environment. The recipe from this work can be used to develop low cost piezoelectric devices such as an energy harvester.Griffith Sciences, Griffith School of EngineeringFull Tex

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