Characteristics of Nanostructure Silicon Photodiode using Laser Assisted Etching | Zendy

Naser M. Ahmed | Zendy; Y. AlDouri | Zendy; Alwan M. Alwan | Zendy; Allaa A. Jabbar | Zendy; Ghassan E. Arif | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Characteristics of Nanostructure Silicon Photodiode using Laser Assisted Etching

Author(s) -

Naser M. Ahmed,

Y. AlDouri,

Alwan M. Alwan,

Allaa A. Jabbar,

Ghassan E. Arif

Publication year - 2013

Publication title -

procedia engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.32

H-Index - 74

ISSN - 1877-7058

DOI - 10.1016/j.proeng.2013.02.051

Subject(s) - photodiode , responsivity , materials science , optoelectronics , silicon , laser , diode , nanostructure , etching (microfabrication) , laser diode , optics , nanotechnology , photodetector , physics , layer (electronics)

We prepared nanostructures silicon photodiode (nPSi) by using laser assisted etching at fixed current density (30mA/cm2) with different etching wavelengths of laser diode (532,650 and 810nm), a (metal/nanostructure silicon/metal) photodiode has been fabricated from rapid thermal oxidation (RTO) and rapid thermal annealing (RTA) processes to improve the characterizations of PSi photodiode, A responsivity of (3A/w) was measured at (450nm) with low value of dark current (1.33μA/cm) and higher value of photo current (610μA/cm2) at 5 volt reverse bias. The results show that the wavelength IR (810nm) give us the best photodiode and electrical characteristics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research