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Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process
Author(s) -
Anders Lei,
XU Rui-chao,
Louise M. Borregaard,
Michele Guizzetti,
Erik Vilain Thomsen
Publication year - 2012
Publication title -
procedia engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.32
H-Index - 74
ISSN - 1877-7058
DOI - 10.1016/j.proeng.2012.09.207
Subject(s) - wafer , materials science , vibration , homogeneity (statistics) , microelectromechanical systems , unimorph , voltage , fabrication , capacitance , standard deviation , acoustics , bandwidth (computing) , electrical engineering , optoelectronics , composite material , piezoelectricity , engineering , electrode , mathematics , medicine , telecommunications , statistics , physics , alternative medicine , pathology , chemistry
This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been characterized. Measurements of the open circuit voltage showed a relative difference of 32.6% between the standard deviation and average. Measurements of the capacitance and resonant frequency showed a relative difference between the standard deviation and average value of 4.3% and 2.9% respectively, thus indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing harvester

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