Enhancement of AlN Slender Piezoelectric Cantilevers Actuation by PECVD Silicon Nitride Coating
Author(s) -
A.T. Tran,
G. Pandraud,
H. Schellevis,
P.M. Sarro
Publication year - 2012
Publication title -
procedia engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.32
H-Index - 74
ISSN - 1877-7058
DOI - 10.1016/j.proeng.2012.09.095
Subject(s) - materials science , silicon nitride , cantilever , deflection (physics) , coating , plasma enhanced chemical vapor deposition , optoelectronics , actuator , nitride , silicon , layer (electronics) , composite material , optics , electrical engineering , engineering , physics
Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams with a thin PECVD silicon nitride (SiN) layer. Very good linearity and high deflection, up to 19 nm/V of actuation deflection for 200 ?m long cantilevers, at quasi-static mode, is obtained for a 500 nm SiN top layer. This value is three times larger than our previously reported value for cantilevers without the SiN layer. The achieved results make these cantilevers, fabricated in a CMOS compatible process, very promising micro/nano actuators
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom