z-logo
open-access-imgOpen Access
Enhancement of AlN Slender Piezoelectric Cantilevers Actuation by PECVD Silicon Nitride Coating
Author(s) -
A.T. Tran,
G. Pandraud,
H. Schellevis,
P.M. Sarro
Publication year - 2012
Publication title -
procedia engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.32
H-Index - 74
ISSN - 1877-7058
DOI - 10.1016/j.proeng.2012.09.095
Subject(s) - materials science , silicon nitride , cantilever , deflection (physics) , coating , plasma enhanced chemical vapor deposition , optoelectronics , actuator , nitride , silicon , layer (electronics) , composite material , optics , electrical engineering , engineering , physics
Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams with a thin PECVD silicon nitride (SiN) layer. Very good linearity and high deflection, up to 19 nm/V of actuation deflection for 200 ?m long cantilevers, at quasi-static mode, is obtained for a 500 nm SiN top layer. This value is three times larger than our previously reported value for cantilevers without the SiN layer. The achieved results make these cantilevers, fabricated in a CMOS compatible process, very promising micro/nano actuators

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom