CMOS PIN Phototransistors for High-Speed Photosensitive Applications | Zendy

Plamen Kostov | Zendy; Wolfgang Gaberl | Zendy; A. Polzer | Zendy; Horst Zimmermann | Zendy

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CMOS PIN Phototransistors for High-Speed Photosensitive Applications

Author(s) -

Plamen Kostov,

Wolfgang Gaberl,

A. Polzer,

Horst Zimmermann

Publication year - 2011

Publication title -

procedia engineering

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.32

H-Index - 74

ISSN - 1877-7058

DOI - 10.1016/j.proeng.2011.12.345

Subject(s) - responsivity , photodetector , optoelectronics , materials science , wafer , cmos , photodiode , image sensor , optics , physics

This work reports on two 40×40μm2 high-speed pnp phototransistors built in a standard 0.18μm CMOS process without modifications. The phototransistors were implanted on wafer consisting of a p+ bulk with a p− epitaxial layer on top of it. Bandwidths up to 50MHz and a gain in responsivity of more than a factor of 3 at 850nm light compared to the photodetector presented in [1] are achieved. Due to the achieved measurements, these phototransistors are well suited for high speed photosensitive applications where inherent amplification is needed like light barriers, image sensors, high speed opto-couplers, etc

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