Open AccessStructural and Optical Properties of SiOx Films Deposited by HFCVD
Author(s) -
José Alberto Luna López,
G. Garcı́a-Salgado,
Arturo Ponce,
D. E. Vázquez Valerdi,
J. Carrillo López,
A. Morales–Sánchez,
T. Díaz Becerril,
E. Rosendo,
H. Juárez Santiesteban
Publication year - 2011
Publication title -
procedia engineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.32
H-Index - 74
ISSN - 1877-7058
DOI - 10.1016/j.proeng.2011.12.075
Subject(s) - high resolution transmission electron microscopy , materials science , photoluminescence , absorption edge , luminescence , chemical vapor deposition , band gap , transmission electron microscopy , substrate (aquarium) , silicon , silicon oxide , nanocrystal , absorption (acoustics) , stoichiometry , nanotechnology , chemical engineering , optoelectronics , analytical chemistry (journal) , composite material , chemistry , engineering , oceanography , silicon nitride , chromatography , geology
Room-temperature photoluminescence (PL) of non-stoichiometric silicon oxide (SiOx, x<2) films prepared by hot filament chemical vapour deposition (HFCVD) technique was studied. The effect of the growth temperature was analyzed. These films show a wide and intense visible PL. A wavelength-shift of the absorption edge and an increasing of the energy band gap were observed when the substrate temperature was decreased. High resolution transmission electron microscopy (HRTEM) and X-ray diffraction (XRD) showed the existence of Si nanocrystals (Si-ncs) with diameters between 1 and 6.5nm within of the SiOx films. The luminescence in these SiOx films is explained according to the combination of different mechanism
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