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An efficient EDAC approach for handling multiple bit upsets in memory array
Author(s) -
Roger Goerl,
Paulo R. C. Villa,
Letícia Bolzani Poehls,
Eduardo Augusto Bezerra,
F. Vargas
Publication year - 2018
Publication title -
microelectronics reliability
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.445
H-Index - 91
eISSN - 1872-941X
pISSN - 0026-2714
DOI - 10.1016/j.microrel.2018.07.060
Subject(s) - single event upset , byte , error detection and correction , computer science , emi , computer hardware , vhdl , parity bit , field programmable gate array , soft error , upset , embedded system , electromagnetic interference , electronic engineering , static random access memory , telecommunications , engineering , algorithm , mechanical engineering
Ionizing radiation and electromagnetic interference (EMI) can cause single event upset (SEU) in memory elements. This threat is one of the major concerns when considering the design of electronic systems for critical applications. Single Error Correction - Double Error Detection (SEC-DED) codes can be used to avoid data corruption caused by soft errors, protecting the memory against single errors. However, the presence of multiple bit upsets is becoming more frequent as technology scales down. Hereafter, we present an Error Detection and Correction (EDAC) approach, namely Parity per Byte and Duplication (PBD), to protect data stored in memory. The technique was described in VHDL, coupled with the LEON3 softcore processor, and mapped into a commercial FPGA. The obtained results have shown that the proposed approach is very effective to detect and correct multiple bit-flips in memory arrays.

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