Photovoltaic potential of III-nitride based tandem solar cells
Author(s) -
Y. Sayad
Publication year - 2016
Publication title -
journal of science advanced materials and devices
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.898
H-Index - 23
eISSN - 2468-2284
pISSN - 2468-2179
DOI - 10.1016/j.jsamd.2016.07.009
Subject(s) - tandem , photovoltaic system , materials science , energy conversion efficiency , nitride , silicon nitride , optoelectronics , work (physics) , solar cell , engineering physics , silicon , nanotechnology , electrical engineering , mechanical engineering , engineering , composite material , layer (electronics)
In this work, we perform a detailed balance analysis of the maximum conversion efficiency of solar cells made from III-nitride materials. First, we present an analysis of single junction solar cells made from InxGa1−xN alloys, and next we focus on tandem cells made from III-nitride and silicon materials. The performed simulations show that the two sub-cells system In0.33Ga0.67N/Si may present 42.43% maximum conversion efficiency, and the three sub-cells system In0.33Ga0.67N/Si/InN 47.83% efficiency under one-sun conditions
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