Silicon carbide hot pressing sintered by magnesium additive: microstructure and sintering mechanism | Zendy

Jingkun Li | Zendy; Xueping Ren | Zendy; Yanling Zhang | Zendy; Hongliang Hou | Zendy

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Silicon carbide hot pressing sintered by magnesium additive: microstructure and sintering mechanism

Author(s) -

Jingkun Li,

Xueping Ren,

Yanling Zhang,

Hongliang Hou

Publication year - 2019

Publication title -

journal of materials research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.832

H-Index - 44

eISSN - 2214-0697

pISSN - 2238-7854

DOI - 10.1016/j.jmrt.2019.10.081

Subject(s) - materials science , sintering , grain boundary , silicon carbide , microstructure , carbide , hot pressing , substructure , metallurgy , grain boundary diffusion coefficient , stacking , composite material , physics , structural engineering , nuclear magnetic resonance , engineering

Silicon carbide was hot pressing sintered at 1300 C/30 MPa by using magnesium additive. Microstructure and sintering mechanism are studied. Result shows that the hot pressing sintered sample composed of both α-SiC and β-SiC, indicating that no polytype transition has happened. Magnesium with stacking faults is located on the silicon carbide matrix as second phase particles. Dislocations and stacking defaults are initiated from grain boundaries and move toward the interior. Micropores locate on grain boundaries, substructure and triple grain junction, revealing a boundary diffusion mechanism. Long-range dislocations in grains and substructures in the lattice confirm a power-law creep mechanism.

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