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α Fe2O3 is naturally n-type material. Zn was used to dope α-Fe2O3 (Zn: Fe2O3) to turn it into p-type. The thin film of Zn: Fe2O3 was obtained by spin coating a blend of Zinc acetate (Zn (CH3COO)2 2H2O) and FeCl2 after annealing the film in air. Zn-doped-Fe2O3 was found as a p-type semiconductor by Hall Measurement. Effect of annealing at 450 °C and 550 °C temperature on electrical properties were also investigated. The resistivity of those films was found to be between 1 and 10 Ω-m. It was observed that the resistivity of the films increases with increasing temperature for most of the sample. It was also observed that the resistivity of the film is inversely proportional to the increasing number of film layer and thickness within most of the sample. Atomic Force Microscopy (AFM) was used to observe the surface morphology of the annealed film on glass substrate. The variation of the average roughness of annealed film on the glass substrate was from 60 nm to 98 nm and the thickness was 160 nm to 540 nm.

Electrical and morphological characterization of zinc-doped α- Fe2O3 thin films at different annealing temperature