Formation of metal silicide by swift heavy ion induced mixing at Mn/Si interface | Zendy

Reena Verma | Zendy; Chhagan Lal | Zendy; Indra Prabha Jain | Zendy

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Formation of metal silicide by swift heavy ion induced mixing at Mn/Si interface

Author(s) -

Reena Verma,

Chhagan Lal,

Indra Prabha Jain

Publication year - 2014

Publication title -

journal of materials research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.832

H-Index - 44

eISSN - 2214-0697

pISSN - 2238-7854

DOI - 10.1016/j.jmrt.2014.06.007

Subject(s) - materials science , silicide , swift heavy ion , transmission electron microscopy , spectroscopy , analytical chemistry (journal) , silicon , irradiation , ion , ion beam , crystallography , metallurgy , nanotechnology , chemistry , fluence , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics

wift heavy ion (SHI) beam mixing at metal/Si system forms various silicides at the interface. In the present study SHI induced mixing has been investigated at Si/Mn/Si interfaces using 120MeVAu+9 ions at three different fluences of 1×1013, 5×1013 and 1×1014ions/cm2. Specimens were characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectroscopy (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after the irradiation. GIXRD results revealed the presence of Mn-silicide at the interface due to the atomic mixing after irradiation. AFM of the samples was used to determine surface roughness contribution to RBS. RBS and XTEM investigations confirmed Mn5Si2, MnSi and Mn4Si7 silicide phases at the interface

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