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7.87 eV laser desorption postionization mass spectrometry of adsorbed and covalently bound bisphenol a diglycidyl methacrylate
Author(s) -
Manshui Zhou,
Chunping Wu,
Artem Akhmetov,
Praneeth D. Edirisinghe,
James L. Drummond,
Luke Hanley
Publication year - 2007
Publication title -
journal of the american society for mass spectrometry
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.961
H-Index - 127
eISSN - 1879-1123
pISSN - 1044-0305
DOI - 10.1016/j.jasms.2007.03.005
Subject(s) - chemistry , soft laser desorption , ionization , mass spectrometry , desorption , analytical chemistry (journal) , ion , atmospheric pressure laser ionization , adsorption , matrix assisted laser desorption/ionization , photoionization , organic chemistry , chromatography
Bisphenol A diglycidyl methacrylate (Bis-GMA) was adsorbed onto or covalently bound to a porous silicon oxide surface. Laser desorption 10.5 eV postionization mass spectrometry (LDPI-MS) was previously demonstrated for surface analysis of adsorbed and surface bound Bis-GMA, but signal to noise levels were low and ion fragmentation was extensive. 7.87 eV postionization using the fluorine laser was demonstrated here for Bis-GMA. However, signal levels remained low for LDPI-MS of Bis-GMA as its ionization potential (IP) was only approximately 7.8 eV, near threshold for single photon ionization by the 7.87 eV fluorine laser. It is known that aromatic tagging of molecular analytes can lower the overall IP of the tagged molecular complex, allowing 7.87 eV single photon ionization. Therefore, Bis-GMA was also derivatized with several tags whose IPs were either below or above 7.87 eV: the tag with an IP below 7.87 eV enhanced single photon ionization while the tags with higher IPs did not. However, signal intensities were enhanced by resonant laser desorption for two of the derivatized Bis-GMAs. Intact ions of Bis-GMA and its derivatives were generally observed by 7.87 eV LDPI-MS, consistent with the formation of ions with relatively little internal energy upon threshold single photon ionization.

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