Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell | Zendy

Peiting Zheng | Zendy; Fiacre Rougieux | Zendy; Chris Samundsett | Zendy; Xinbo Yang | Zendy; Yimao Wan | Zendy; J. Degoulange | Zendy; R. Einhaus | Zendy; P. Rivat | Zendy; Daniel Macdonald | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell

Author(s) -

Peiting Zheng,

Fiacre Rougieux,

Chris Samundsett,

Xinbo Yang,

Yimao Wan,

J. Degoulange,

R. Einhaus,

P. Rivat,

Daniel Macdonald

Publication year - 2016

Publication title -

energy procedia

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.474

H-Index - 81

ISSN - 1876-6102

DOI - 10.1016/j.egypro.2016.07.124

Subject(s) - materials science , common emitter , silicon , getter , solar cell , optoelectronics , carrier lifetime

In this paper, we present the 3D simulation of>20% efficiency solar cells using n-type 100% Upgraded-Metallurgical Grade (UMG) Czochralski (CZ) silicon and Electronic Grade (EG) Float Zone (FZ) fabricated using the same process. The cells have a passivated emitter rear locally diffused (PERL) structure, with an etch-back approach on the rear to maintain high bulk lifetime in the cells via phosphorus gettering. Simulation ofthe power losses of both devices are analysed as a function of measured material and cell parameters, including minority carrier lifetime, reflectance, contact resistivity and recombination parameters of the diffused and non-diffused surfaces

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research