Light Induced Curing (LIC) of Passivation Layers Deposited on Native Silicon Oxide | Zendy

Sebastian Joos | Zendy; Axel Herguth | Zendy; Uwe Heß | Zendy; Jan Ebser | Zendy; Sven Seren | Zendy; Barbara Terheiden | Zendy; Giso Hahn | Zendy

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Light Induced Curing (LIC) of Passivation Layers Deposited on Native Silicon Oxide

Author(s) -

Sebastian Joos,

Axel Herguth,

Uwe Heß,

Jan Ebser,

Sven Seren,

Barbara Terheiden,

Giso Hahn

Publication year - 2012

Publication title -

energy procedia

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.474

H-Index - 81

ISSN - 1876-6102

DOI - 10.1016/j.egypro.2012.07.075

Subject(s) - passivation , curing (chemistry) , silicon , materials science , oxide , silicon oxide , optoelectronics , chemical engineering , nanotechnology , composite material , metallurgy , layer (electronics) , engineering , silicon nitride

This work presents a novel insight to the aspects of silicon surface passivation and the influence of thin intermediate layers generated by chemically grown silicon oxides. Strong light induced effects on passivation properties are investigated. After exposure to light (0.25 suns) for about 60 s, samples based on a PECVD layer system consisting of SiNx and SiO2 deposited on crystalline silicon with native silicon oxides show an improvement of more than 100% in minority carrier lifetime. These improvements are stable over months and lead to effective surface recombination velocities as low as 10cm/s on chemically polished p-type FZ wafers. With the use of different light sources, corona charging and annealing experiments the effect is investigated in detail. Finally, the effect is proposed to be a photo induced curing process of defects in the Si/SiO2 interface with the incorporation of hydrogen

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