Open AccessMetal Surface Contamination During Phosphorus Diffusion
Author(s) -
Florian Buchholz,
E. Wefringhaus,
Gunnar Schubert
Publication year - 2012
Publication title -
energy procedia
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.474
H-Index - 81
ISSN - 1876-6102
DOI - 10.1016/j.egypro.2012.07.065
Subject(s) - contamination , oxidizing agent , wafer , diffusion , metal , materials science , common emitter , environmental chemistry , solubility , analytical chemistry (journal) , chemistry , metallurgy , nanotechnology , optoelectronics , thermodynamics , ecology , physics , organic chemistry , biology
We present work on the impact of surface contamination before phosphorus diffusion on solar cells and life-time samples. Metal surface contamination on KOH/IPA textured Cz wafers was measured by the Sandwich-Etch ICP-MS technique. High surface contamination, especially of Cu, was found directly after texturing, which is attributed to low solubility of metals in diluted, non-oxidizing alkaline solution. Different contamination levels were reached by applying standard cleaning procedures such as HCl/HF dip sequences and the piranha etch. The emitter profiles that were tested ranged from heavy diffusions of 45Ω/sq to shallow diffusions of 120Ω/sq. It was found that threshold values which obviously impact life-times and solar cell performance (Voc) were much higher than expected
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