High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells | Zendy

Florian Werner | Zendy; W. T. M. Stals | Zendy; R. Görtzen | Zendy; Boris Veith | Zendy; Rolf Brendel | Zendy; Jan Schmidt | Zendy

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High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells

Author(s) -

Florian Werner,

W. T. M. Stals,

R. Görtzen,

Boris Veith,

Rolf Brendel,

Jan Schmidt

Publication year - 2011

Publication title -

energy procedia

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.474

H-Index - 81

ISSN - 1876-6102

DOI - 10.1016/j.egypro.2011.06.140

Subject(s) - passivation , atomic layer deposition , wafer , silicon , materials science , layer (electronics) , deposition (geology) , aluminum oxide , optoelectronics , aluminium , solar cell , carrier lifetime , nanotechnology , metallurgy , paleontology , sediment , biology

High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30nm/min on 15.6×15.6cm2 silicon wafers of 10nm thick Al2O3 layers deposited in a novel inline spatial ALD system. The effective surface recombination velocity on n-type Czochralski-grown (Cz) silicon wafers is shown to be virtually independent of injection level. Surface recombination velocities below 2.9cm/s and an extremely low interface state density below 8×1010eV 1cm 2 are achieved. We demonstrate that the novel inline spatial ALD system provides the means to integrate Al2O3 passivation layers into industrial solar cells

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