An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices | Zendy

P. Keßler | Zendy; K. Lorenz | Zendy; S. M. C. Miranda | Zendy; J. G. Correia | Zendy; K. Johnston | Zendy; R. Vianden | Zendy

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An In-defect complex as a possible explanation for high luminous efficacy of InGaN and AlInN based devices

Author(s) -

P. Keßler,

K. Lorenz,

S. M. C. Miranda,

J. G. Correia,

K. Johnston,

R. Vianden

Publication year - 2010

Publication title -

hyperfine interactions

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.359

H-Index - 48

eISSN - 1572-9540

pISSN - 0304-3843

DOI - 10.1007/s10751-010-0200-9

Subject(s) - indium , materials science , impurity , vacancy defect , dopant , electric field , optoelectronics , crystallography , chemistry , doping , physics , organic chemistry , quantum mechanics

The role of indium in GaN and AlN films is investigated with the method of the perturbed angular correlation (PAC). Using the PAC probe $^{111}$In in addition to indium on substitutional cation sites a large fraction of probes is found in a distinctly different microscopic environment which was attributed to the formation of an indium nitrogen-vacancy (VN) complex. The influence of an electron capture induced after ef fect is ruled out by additional measurements with the PAC probes $^{111m}$Cd and $^{117}$Cd and using GaN with different dopants. It is shown that the VN is not bound to substitutional Cd impurities suggesting that the In-VN complex formation is a particularity of In in GaN and AlN. Finally, a preliminary model is presented to explain the temperature behavior of the electric field gradient, observed in the In-VN complex measured with $^{111}$In

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