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Ultraviolet photoelectron spectroscopy of Si 4- to Si 1000-
Author(s) -
M. Hoffmann,
G. Wrigge,
Bernd von Issendorff,
Jiri Müller,
Gerd Ganteför,
Hellmut Haberland
Publication year - 2001
Publication title -
the european physical journal d
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.348
H-Index - 89
eISSN - 1434-6079
pISSN - 1434-6060
DOI - 10.1007/s100530170048
Subject(s) - x ray photoelectron spectroscopy , spectral line , ultraviolet , ultraviolet photoelectron spectroscopy , silicon , cluster (spacecraft) , range (aeronautics) , materials science , band gap , spectroscopy , analytical chemistry (journal) , atomic physics , chemistry , optoelectronics , physics , nuclear magnetic resonance , quantum mechanics , astronomy , computer science , composite material , programming language , chromatography
Using a new experimental setup we have measured UV (hν = 6.4 eV) photoelectron spectra of cold silicon cluster anions Si n - in a very broad size range. For sizes up to n = 46 the spectra exhibit rich structures. For larger sizes only smooth spectra have been obtained. No trace of a bandgap has been found even for clusters with more than 1000 atoms.

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